An Analytical Model for the Gate C–V Characteristics of UTB III—V-on-Insulator MIS Structure
نویسندگان
چکیده
منابع مشابه
the structure of lie derivations on c*-algebras
نشان می دهیم که هر اشتقاق لی روی یک c^*-جبر به شکل استاندارد است، یعنی می تواند به طور یکتا به مجموع یک اشتقاق لی و یک اثر مرکز مقدار تجزیه شود. کلمات کلیدی: اشتقاق، اشتقاق لی، c^*-جبر.
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ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2017
ISSN: 2168-6734
DOI: 10.1109/jeds.2017.2725340